1,986 research outputs found
Search for Sterile Neutrinos with a Radioactive Source at Daya Bay
The far site detector complex of the Daya Bay reactor experiment is proposed
as a location to search for sterile neutrinos with > eV mass. Antineutrinos
from a 500 kCi 144Ce-144Pr beta-decay source (DeltaQ=2.996 MeV) would be
detected by four identical 20-ton antineutrino targets. The site layout allows
flexible source placement; several specific source locations are discussed. In
one year, the 3+1 sterile neutrino hypothesis can be tested at essentially the
full suggested range of the parameters Delta m^2_{new} and sin^22theta_{new}
(90% C.L.). The backgrounds from six nuclear reactors at >1.6 km distance are
shown to be manageable. Advantages of performing the experiment at the Daya Bay
far site are described
Ultrafast holography and transient-absorption spectroscopy in charge-transfer polymers
Charge-transfer polymers are a new class of nonlinear optical materials which can be used for generating femtosecond holographic gratings. Using semiconducting polymers sensitized with varying concentrations of C{sub 60}, holographic gratings were recorded by individual ultrafast laser pulses; the diffraction efficiency and time decay of the gratings were measured using non-degenerate four-wave mixing. Using a figure of merit for dynamic data processing, the temporal diffraction efficiency, this new class of materials exhibits between two and 12 orders of magnitude higher response than previous reports. The charge transfer range at polymer/C{sub 60} interfaces was further studied using transient absorption spectroscopy. The fact that charge-transfer occurs in the picosecond-time scale in bilayer structures (thickness 200 {angstrom}) implies that diffusion of localized excitations to the interface is not the dominant mechanism; the charge transfer range is a significant fraction of the film thickness. From analysis of the excited state decay curves, we estimate the charge transfer range to be 80 {angstrom} and interpret that range as resulting from quantum delocalization of the photoexcitations
Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile
We show that infrared imaging of the charge density profile in organic
field-effect transistors (FETs) can probe transport characteristics which are
difficult to access by conventional contact-based measurements. Specifically,
we carry out experiments and modeling of infrared spectromicroscopy of
poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a
relatively low resistance of the gate insulators. We conclude that the mobility
of P3HT has a power-law density dependence, which is consistent with the
activated transport in disorder-induced tails of the density of states.Comment: 3+ pages, 2 figure
Learning to Extract Motion from Videos in Convolutional Neural Networks
This paper shows how to extract dense optical flow from videos with a
convolutional neural network (CNN). The proposed model constitutes a potential
building block for deeper architectures to allow using motion without resorting
to an external algorithm, \eg for recognition in videos. We derive our network
architecture from signal processing principles to provide desired invariances
to image contrast, phase and texture. We constrain weights within the network
to enforce strict rotation invariance and substantially reduce the number of
parameters to learn. We demonstrate end-to-end training on only 8 sequences of
the Middlebury dataset, orders of magnitude less than competing CNN-based
motion estimation methods, and obtain comparable performance to classical
methods on the Middlebury benchmark. Importantly, our method outputs a
distributed representation of motion that allows representing multiple,
transparent motions, and dynamic textures. Our contributions on network design
and rotation invariance offer insights nonspecific to motion estimation
Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices
We have fabricated electric double-layer field-effect devices to
electrostatically dope our active materials, either =0.015
GaMnAs or =3.2 GaBeAs. The devices
are tailored for interrogation of electric field induced changes to the
frequency dependent conductivity in the accumulation or depletions layers of
the active material via infrared (IR) spectroscopy. The spectra of the
(Ga,Be)As-based device reveal electric field induced changes to the IR
conductivity consistent with an enhancement or reduction of the Drude response
in the accumulation and depletion polarities, respectively. The spectroscopic
features of this device are all indicative of metallic conduction within the
GaAs host valence band (VB). For the (Ga,Mn)As-based device, the spectra show
enhancement of the far-IR itinerant carrier response and broad mid-IR resonance
upon hole accumulation, with a decrease of these features in the depletion
polarity. These later spectral features demonstrate that conduction in
ferromagnetic (FM) GaMnAs is distinct from genuine metallic
behavior due to extended states in the host VB. Furthermore, these data support
the notion that a Mn-induced impurity band plays a vital role in the electron
dynamics of FM GaMnAs. We add, a sum-rule analysis of the spectra
of our devices suggests that the Mn or Be doping does not lead to a substantial
renormalization of the GaAs host VB
Knight Shift Anomalies in Heavy Electron Materials
We calculate non-linear Knight Shift vs. susceptibility anomalies
for Ce ions possessing local moments in metals. The ions are modeled with the
Anderson Hamiltonian and studied within the non-crossing approximation (NCA).
The non-linearity diminishes with decreasing Kondo temperature
and nuclear spin- local moment separation. Treating the Ce ions as an
incoherent array in CeSn, we find excellent agreement with the observed Sn
data.Comment: 4 pages, Revtex, 3 figures available upon request from
[email protected]
Raman Scattering and Anomalous Current Algebra: Observation of Chiral Bound State in Mott Insulators
Recent experiments on inelastic light scattering in a number of insulating
cuprates [1] revealed a new excitation appearing in the case of crossed
polarizations just below the optical absorption threshold. This observation
suggests that there exists a local exciton-like state with an odd parity with
respect to a spatial reflection. We present the theory of high energy large
shift Raman scattering in Mott insulators and interpret the experiment [1] as
an evidence of a chiral bound state of a hole and a doubly occupied site with a
topological magnetic excitation. A formation of these composites is a crucial
feature of various topological mechanisms of superconductivity. We show that
inelastic light scattering provides an instrument for direct measurements of a
local chirality and anomalous terms in the electronic current algebra.Comment: 18 pages, TeX, C Version 3.
Zero frequency divergence and gauge phase factor in the optical response theory
The static current-current correlation leads to the definitional zero
frequency divergence (ZFD) in the optical susceptibilities. Previous
computations have shown nonequivalent results between two gauges ( and ) under the exact same unperturbed wave functions. We
reveal that those problems are caused by the improper treatment of the
time-dependent gauge phase factor in the optical response theory. The gauge
phase factor, which is conventionally ignored by the theory, is important in
solving ZFD and obtaining the equivalent results between these two gauges. The
Hamiltonians with these two gauges are not necessary equivalent unless the
gauge phase factor is properly considered in the wavefunctions. Both
Su-Shrieffer-Heeger (SSH) and Takayama-Lin-Liu-Maki (TLM) models of
trans-polyacetylene serve as our illustrative examples to study the linear
susceptibility through both current-current and dipole-dipole
correlations. Previous improper results of the calculations and
distribution functions with both gauges are discussed. The importance of gauge
phase factor to solve the ZFD problem is emphasized based on SSH and TLM
models. As a conclusion, the reason why dipole-dipole correlation favors over
current-current correlation in the practical computations is explained.Comment: 17 pages, 7 figures, submitted to Phys. Rev.
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